JPH0455155B2 - - Google Patents

Info

Publication number
JPH0455155B2
JPH0455155B2 JP15409887A JP15409887A JPH0455155B2 JP H0455155 B2 JPH0455155 B2 JP H0455155B2 JP 15409887 A JP15409887 A JP 15409887A JP 15409887 A JP15409887 A JP 15409887A JP H0455155 B2 JPH0455155 B2 JP H0455155B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon carbide
silicon
carbide single
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15409887A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63319294A (ja
Inventor
Atsuko Uemoto
Masaki Furukawa
Akira Suzuki
Mitsuhiro Shigeta
Yoshihisa Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP15409887A priority Critical patent/JPS63319294A/ja
Publication of JPS63319294A publication Critical patent/JPS63319294A/ja
Publication of JPH0455155B2 publication Critical patent/JPH0455155B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP15409887A 1987-06-19 1987-06-19 炭化珪素単結晶基板の製造方法 Granted JPS63319294A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15409887A JPS63319294A (ja) 1987-06-19 1987-06-19 炭化珪素単結晶基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15409887A JPS63319294A (ja) 1987-06-19 1987-06-19 炭化珪素単結晶基板の製造方法

Publications (2)

Publication Number Publication Date
JPS63319294A JPS63319294A (ja) 1988-12-27
JPH0455155B2 true JPH0455155B2 (en]) 1992-09-02

Family

ID=15576870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15409887A Granted JPS63319294A (ja) 1987-06-19 1987-06-19 炭化珪素単結晶基板の製造方法

Country Status (1)

Country Link
JP (1) JPS63319294A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
CA2113336C (en) * 1993-01-25 2001-10-23 David J. Larkin Compound semi-conductors and controlled doping thereof
JP4720051B2 (ja) * 2001-09-10 2011-07-13 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法
FR2854641B1 (fr) * 2003-05-05 2005-08-05 Centre Nat Rech Scient Procede de formation d'une couche de carbure de silicium sur une tranche de silicium
JP4690906B2 (ja) * 2006-02-21 2011-06-01 新日本製鐵株式会社 炭化珪素単結晶育成用種結晶及びその製造方法並びに炭化珪素単結晶の製造方法

Also Published As

Publication number Publication date
JPS63319294A (ja) 1988-12-27

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